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(R)
MJD47
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s
s s
s
STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO TIP47
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DPAK TO-252 (Suffix "T4")
APPLICATIONS s SWITCH MODE POWER SUPPLIES s AUDIO AMPLIFIERS s GENERAL PURPOSE SWITCHING AND AMPLIFIER DESCRIPTION The MJD47 is manufactured using Medium Voltage Epitaxial Planar technology, resulting in a rugged high performance cost-effective transistor.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitt er-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C St orage Temperature Max. Operating Junction T emperature Value 350 250 5 1 2 0.6 1.2 15 -65 to 150 150 Uni t V V V A A A A W
o o
C C
January 2000
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THERMAL DATA
R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 8.33 100
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CES I CEO I EBO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (IB = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 350 V V CE = 150 V V EB = 5 V I C = 30 mA 250 Min. Typ . Max. 0.1 0.1 1 Un it mA mA mA V
V CEO(sus ) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat ) V BE(on) h FE fT hf e Collector-Emitter Saturation Voltage Base-Emitter O n Voltage DC Current G ain Transition Frequency Small Signal Current Gain
IC = 1 A IC = 1 A I C = 0.3 A IC = 1 A I C = 0.2 A I C = 0.2 A
IB = 0.2 A V CE = 10 V VCE = 10 V V CE = 10 V VCE = 10 V VCE = 10 V f = 2MHz f = 1KHz 30 10 10 25
1 1.5 150
V V
MHz
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
Safe Operating Area
Derating Curves
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DC Current Gain DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector-Base Capacitance
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Switching Time Inductive Load Switching Time Inductive Load
Switching Time Inductive Load
Switching Time Inductive Load
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TO-252 (DPAK) MECHANICAL DATA
mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0o 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.8 1.00 8o 0.024 0o TYP. MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 0.039 0o inch TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398
DIM.
P032P_B
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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